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A write-once-read-many-times (WORM) memory devices based on O2 plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is 109  for a device with the radius of 50 m) as a result of the O2 plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is 103  for the radius of 50 m) by applying a voltage pulse (e.g., 10 V/1 s). The WORM device has good data-retention and reading-endurance capabilities. ? 2014 AIP Publishing LLC.

Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film

Realization of write-once-read-many-times memory device with O₂ plasma-treated indium gallium zinc oxide thin film