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The entire graphene field-effect-transistor (FET) devices first fabricated onSiO2/Si are peeled from the surface and placed on a different wafer. Bothlongitudinal and transverse resistivity measurements of the devices before andafter the transfer are measured to calculate the mobility for a directcomparison. After transferred to different SiO2/Si wafers, the mobilitygenerally is comparable and the defect density does not show any significantincrease, which indicates the degradation due to the transfer process itself isminimal. The same method can be applied to transfer graphene devices to anyarbitrary substrates (e.g. SrTiO3 or STO). The transfer method developed herenot only eliminates the need to locate single-layer graphene on non-SiO2/Sisubstrates for patterning, but also provides a convenient way to study theeffects of various substrates on graphene electronic properties.

Direct comparison of graphene devices before and after transfer to different substrates