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The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-typeSi(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm havebeen investigated between 100 and 300 K. We observe a sharp drop of thein-plane resistivity at 200K due to the onset of conduction along the Si / SiO2interface related to tunneling of electrons from the Fe3O4 into theaccumulation layer of holes at the Si / SiO2 interface, whose existence wasconfirmed by capacitance-voltage measurements and a two band analysis of theHall effect. This is accompanied by a large increase of the Seebeck coefficientreaching +1000 {\mu}V/K at 300K that is related to holes in the p-type Si(001)and gives a power factor of 70 mW/K2m when the Fe3O4 layer thickness is reduceddown to 150 nm. We show that most of the current flows in the Fe3O4 layer at300 K, while the Fe3O4 / SiO2 / p-type Si(001) heterostructures behave liketunneling p-n junctions in the transverse direction.

Current transport and thermoelectric properties of very high power factor Fe3O4 / SiO2 / p-type Si (001) devices