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Surface photovoltage (SPV) spectroscopy, which is a versatile method toanalyze the energetic distribution of electronic defect states at surfaces andinterfaces of wide-bandgap semiconductor (hetero-)structures, is applied tocomparatively investigate heterostructures made of 5-unit-cell-thick LaAlO$_3$films grown either on TiO$_2$- or on SrO-terminated SrTiO$_3$. As shown in anumber of experimental and theoretical investigations in the past, these twointerfaces exhibit dramatically different properties with the first beingconducting and the second insulating.  Our present SPV investigation reveals clearly distinguishable interfacedefect state distributions for both configurations when interpreted within theframework of a classical semiconductor band scheme. Furthermore, bare SrTiO$_3$crystals with TiO$_2$ or mixed SrO/TiO$_2$ terminations show similar SPVspectra and transients as do LaAlO$_3$-covered samples with the respectivetermination of the SrTiO$_3$ substrate. This is in accordance with a number ofrecent works that stress the decisive role of SrTiO$_3$ and the minor role ofLaAlO$_3$ with respect to the electronic interface properties.

Conducting and insulating LaAlO$_3$/SrTiO$_3$ interfaces: A comparative surface photovoltage investigation