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We report on the transport properties of an array of N about 30interconnected Nb nanowires, grown by sputtering on robust porous Sisubstrates. The analyzed system exhibits a broad resistive transition in zeromagnetic field, H, and highly nonlinear V(I) characteristics as a function of Hwhich can be both consistently described by quantum tunneling of phase slips.

Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks