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A model for realistic InAs quantum dot composition profile is proposed andanalyzed, consisting of a double region scheme with an In-rich internal coreand an In-poor external shell, in order to mimic the atomic scale phenomenasuch as In-Ga intermixing and In segregation during the growth and overgrowthwith GaAs. The parameters of the proposed model are derived by reproducing theexperimentally measured polarization data. Further understanding is developedby analyzing the strain fields which suggests that the two-composition modelindeed results in lower strain energies than the commonly applied uniformcomposition model.

Understanding Polarization Properties of InAs Quantum Dots by Atomistic Modeling of Growth Dynamics