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We report on the magnetic switching and backhopping effects due tospin-transfer-torque in magnetic tunnel junctions. Experimental data on thecurrent-induced switching in junctions with MgO tunnel barrier reveal a randomback-and-forth switching between the magnetization states, which appears whenthe current direction favors the parallel magnetic configuration. The effectdepends on the barrier thickness $t_b$, and is not observed in tunnel junctionswith very thin MgO tunnel barriers, $t_b$ $<$ 0.95 nm. Switching dependence onthe bias voltage and barrier thickness is explained in terms of the macrospinmodel, with the magnetization dynamics described by the modifiedLandau-Lifshitz-Gilbert equation. Numerical simulations indicate that thecompetition between in-plane and out-of-plane torque components can result athigh bias voltages in a non-deterministic switching behavior, in agreement withexperimental observations. When the barrier thickness is reduced, the overallcoupling between the magnetic layers across the barrier becomes ferromagnetic,which suppresses the backhopping effect.

Backhopping effect in magnetic tunnel junctions: comparison between theory and experiment