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The coherent, interlayer resistance of a misoriented, rotated interfacebetween two stacks of AB graphite is determined for a variety of misorientationangles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10m$\Omega \mu{\rm m}^2$. For small rotation angles, the coherent interlayerresistance exponentially approaches the ideal quantum resistance at energiesaway from the charge neutrality point. Over a range of intermediate angles, theresistance increases exponentially with cell size for minimum size unit cells.Larger cell sizes, of similar angles, may not follow this trend. The energydependence of the interlayer transmission is described.

The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite