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In this work we present a study on the negative differential resistancebehavior and the impact of various deformations {like ripples, twist, wrap} anddefects like vacancies and edge roughness on the electronic properties ofshort-channel MoS2 armchair nanoribbon MOSFETs. The effect of deformation {3 to7 degree twist or wrap and 0.3 to 0.7 Ang rippling amplitude} and defects on a10 nm MoS2 ANR FET is evaluated by the density functional tight binding theoryand the non-equilibrium Green`s function approach. We study the channel densityof states, transmission spectra and the ID VD characteristics of such devicesunder the varying conditions, with focus on the negative differentialresistance behavior. Our results show significant change in the NDR peak tovalley ratio and the NDR window with such minor intrinsic deformations,especially with the rippling.

Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon MOSFET