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We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies. © 2013 AIP Publishing LLC.The authors want to acknowledge the financial support from Spanish government through grants QD-NANOTICS: TEC2011-29120-C05-01, EPIC-NANOTICS: TEC2011-29120-C05-04, PROMESA: ENE2012-37804-C02-02, and Q&C Light: S2009ESP-1503. We also thank the support from the PROMETEO 2009/74 project (Generalitat Valenciana). J.C.-F. thanks the Spanish MCI for his FPI grant (No. BES-2006-12300) and J.H. acknowledges to the JAE program for the funds.Peer Reviewe

Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots