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An optical read-out technique is demonstrated that enables mapping the time-dependentelectrostatic potential in the tunnel junction of a scanning tunneling microscope with millivolt andnanosecond accuracy. We measure the time-dependent intensity of plasmonic light emitted fromthe tunnel junction upon excitation with a nanosecond voltage pulse. The light intensity is found tobe a quantitative measure of the voltage between tip and sample. This permits non-invasivemapping of fast voltage transients directly at the tunnel junction. Knowledge of the pulse profilereaching the tunnel junction is applied to optimize the experiment’s time response by activelyshaping the incident pulses

Quantitative mapping of fast voltage pulses in tunnel junctions by plasmonic luminescence