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We describe a planar silicon metal-oxide-semiconductor (MOS) based singlehole transistor, which is compatible with conventional Si CMOS fabrication. Amulti-layer gate design gives independent control of the carrier density in thedot and reservoirs. Clear Coulomb blockade oscillations are observed, andsource-drain biasing measurements show that it is possible to deplete the dotdown to the few hole regime, with excited states clearly visible. Thearchitecture is sufficiently versatile that a second hole dot could be inducedadjacent to the first one.

Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot