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We report that electricity can be generated from limitless thermal motion ofions by two dimensional (2D) surface of silicon wafer at room temperature. Atypical silicon device, on which asymmetric electrodes with Au and Ag thinfilms were fabricated, can generate a typical open-circuit voltage up to 0.40 Vin 5 M CuCl2 solution and an output current over 11 {\mu}A when a 25 k{\Omega}resistor was loaded into the circuit. Positive correlation between the outputcurrent and the temperature, as well as the concentration, was observed. Themaximum output current and power density are 17 {\mu}A and 8.6 {\mu}W/cm2,respectively. The possibility of chemical reaction was excluded by four groupsof control experiments. A possible dynamic drag mechanism was proposed toexplain the experimental results. This finding further demonstrates thatambient heat in the environment can be harvested by 2D semiconductor surfacesor low dimensional materials and would contribute significantly to the researchof renewable energy. However, this finding does not agree with the second lawof thermal dynamatics. A lot of future work will be needed to study themechanism behind this phenomenon.

Electricity Harvested from Ambient Heat across Silicon Surface