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We report the carrier densities at the surface of single-crystal quantumwells as a function of material, orientation and well width. We include wellsconstructed from silicon, gallium arsenide and indium arsenide with threecrystal orientations, (100), (110) and (111), included for each material. Wefind that the D2 states in a silicon (100) quantum well have the smallestdensity near the surface of the slab. Inspection of the planar average of thecarrier densities reveals a characteristic shape that depends on the materialand orientation, which leads to a varying degree of suppression or enhancementof the density near the surface. The physics responsible for the suppression orenhancement of the density near the surface can be traced to a constraintimposed by the symmetry of quantum well wavefunction on the phases of the bulkBloch states of the crystal from which it can be constructed.

applied physics letters

A comparison of the carrier density at the surface of quantum wells for  different crystal orientations of silicon, gallium arsenide and indium  arsenide