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We study a crystallographic etching process of graphene nanostructures wherezigzag edges can be prepared selectively. The process involves heatingexfoliated single-layer graphene samples with a predefined pattern of antidotarrays in an argon atmosphere at 820 C, which selectively removes carbon atomslocated on armchair sites. Atomic force microscopy and scanning electronmicroscopy cannot resolve the structure on the atomic scale. However, weaklocalization and Raman measurements - which both probe intervalley scatteringat armchair edges - indicate that zigzag regions are enhanced compared tosamples prepared with oxygen based reactive ion etching only.

Weak localization and Raman study of anisotropically etched graphene antidots