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Amorphous metal oxide thin-film transistors (TFT) are fabricated usingInOx-based semiconductors doped with TiO2, WO3 or SiO2. Although density ofdopant is low in the film, change in the electrical properties showed strongdependence on the dopant species. We found that the dependence could bereasonably explained by the bond-dissociation energy. By incorporating thedopant with higher bond-dissociation energy, the film becomes less sensitive tooxygen partial pressure used during sputtering deposition and remainselectrically stable to thermal annealing treatment. The concept ofbond-dissociation energy can contribute to the realization of more stable metaloxide TFTs for flat panel displays.

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications