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Electrical properties of contact-interfaces in germanium nanowire field effect transistor devices are studied. In contrast to planar bulk devices, it is shown that the active conduction channel and gate length extend between and underneath the contact electrodes. Furthermore, direct scaling of contact resistivity and Schottky barrier height with electrode metal function is observed. The associated pinning parameter was found to be γ=0.65 ± 0.03γ=0.65 ± 0.03, which demonstrates a significant suppression of Fermi level pinning in quasi-one-dimensional structures

Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires