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We present temperature dependent $I-V$ measurements of short channel MoS$_2$field effect devices at high source-drain bias. We find that although the $I-V$characteristics are Ohmic at low bias, the conduction becomes space chargelimited at high $V_{DS}$ and existence of an exponential distribution of trapstates was observed. The temperature independent critical drain-source voltage($V_c$) was also determined. The density of trap states was quantitativelycalculated from $V_c$. The possible origin of exponential trap distribution inthese devices is also discussed.

Trap-assisted space charge limited transport in short channel MoS2 transistor