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A self-consistent expression for the surface recombination velocity $S$ andthe surface Fermi level unpinning energy as a function of light excitationpower ($P$) is presented for n- and p-type semiconductors doped above the10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using anovel polarized microluminescence technique are used to illustrate two limitingcases of the model. For a naturally oxidized surface $S$ is described by apower law in $P$ whereas for a passivated surface $S^{-1}$ varieslogarithmically with $P$. Furthermore, the variation in $S$ with surface statedensity and bulk doping level is found to be the result of Fermi levelunpinning rather than a change in the intrinsic surface recombination velocity.It is concluded that $S$ depends on $P$ throughout the experimentallyaccessible range of excitation powers and therefore that no instrinsic valuecan be determined. Previously reported values of $S$ on a range ofsemiconducting materials are thus only valid for a specific excitation power.

Absence of an intrinsic value for the surface recombination velocity in doped semiconductors