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We present the studies of electrical transport and magnetic interactions inZn_{1-x}Mn_{x}GeAs_{2} crystals with low Mn content 0 \leq x \leq 0.043. Weshow that the ionic-acceptor defects are mainly responsible for the strongp-type conductivity of our samples. We found that the negativemagnetoresistance (MR) with maximum values of about -50% is related to the weaklocalization phenomena. The magnetic properties of Zn1-xMnxGeAs2 samples showthat the random Mn-distribution in the cation sites of the host lattice occursonly for the sample with the lowest Mn-content, x=0.003. The samples withhigher Mn-content show a high level of magnetic frustration. NonzeroCurie-Weiss temperature observed in all our samples indicates that weakferromagnetic (for x=0.003) or antiferromagnetic (for x>0.005) interactionswith |{\Theta}|<3 K are present in this system. The RKKY model, used toestimate the Mn-hole exchange integral Jpd for the dilutedZn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd=(0.75+/-0.09) eV.

Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties