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GaAs and GaAs based materials have outstanding optoelectronic properties andare widely used as light emitting media in devices. Many approaches have beenapplied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which aretransmission windows of optical fibers. In this paper we present thephotoluminescence at 1.30 um from deep level defects in GaAs treated byion-implantation and flash lamp annealing (FLA). Such emission, which exhibitssuperior temperature stability, can be obtained from FLA treated virgin GaAs aswell as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence.By photoluminescence, Raman measurements, and positron annihilationspectroscopy, we conclude that the origin of the 1.30 um emission is fromtransitions between the VAs-donor and X-acceptor pairs.

Origin and enhancement of the 1.3 um luminescence from GaAs treated by ion-implantation and flash lamp annealing