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We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gatedjunction field-effect transistors using a range of LaAlO_3 thicknesses as thetop gate insulator. Gated Hall bars show near ideal transistor characteristicsat room temperature with on-off ratios greater than 1000. Lower temperaturemeasurements demonstrate a systematic increase in the Hall mobility as thesheet carrier density in the channel is depleted via the top gate, providing aroute to higher mobility, lower density electron gases in this system.

Transistor operation and mobility enhancement in top-gated LaAlO_3 / SrTiO_3 heterostructures