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The mechanisms of ripple formation on silicon surface by femtosecond laserpulses are investigated. We demonstrate the transient evolution of the densityof the excited free-carriers. As a result, the experimental conditions requiredfor the excitation of surface plasmon polaritons are revealed. The periods ofthe resulting structures are then investigated as a function of laserparameters, such as the angle of incidence, laser fluence, and polarization.The obtained dependencies provide a way of better control over the propertiesof the periodic structures induced by femtosecond laser on the surface of asemiconductor material.

Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon