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Using low energy electron diffraction (LEED), scanning tunnelling microscopy(STM) and x-ray absorption spectroscopy (XAS) techniques, we have studied thefirst steps of silicon adsorption onto Cu (001) single crystal substrate. Forlow coverage (~ 0.5 ML) and after annealing at 100{\deg}C, STM images and LEEDpatterns reveal the formation of an ordered quasi commensurate superstructure.From a quantitative analysis of XAS data, we extract the Si-Cu distance anddetail the local atomic arrangement of the structure.

High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (533) silicide structure on Cu(001)