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Effect of two-layer (In0.04Ga0.96N and In0.08Ga0.92N) staircase electron injector (SEI) on quantum efficiency of light-emitting-diodes (LEDs) in the context of active regions composed of single and quad 3 nm double heterostructures (DHs) is reported. The experiments were augmented with the first order model calculations of electron overflow percentile. Increasing the two-layer SEI thickness from 4 + 4 nm up to 20 + 20 nm substantially reduced, if not totally eliminated, the electron overflow in single DH LEDs at low injections without degrading the material quality evidenced by the high optical efficiency observed at 15 K and room temperature. The improvement in quad 3 nm DH LEDs with increasing SEI thickness is not so pronounced as the influence of SEI is less for thicker active regions, which in and of themselves necessarily thermalize the carriers.

The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes