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Techniques of X-ray and ultraviolet photoelectron spectroscopy are performed to investigate the energy band discontinuity of pulsed-laser-deposited SrTiO3 (STO)/GaAs heterostructure. The valence band offset is determined to be 2.6 eV, while the conduction band offset is deduced to be 0.7 eV. As a consequence, an energy band diagram of STO/GaAs with a type II band alignment forming at the interface is precisely constructed. The chemical states across the STO/GaAs interface are investigated by sputter-depth profile, and there are no detectable interfacial reaction and intermediate layer occurring between the epitaxial STO film and GaAs substrate.Department of Applied Physic

applied physics letters

Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy