English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxiallygrown on GaAs (111) substrate using solid source molecular beam epitaxy. Theirgrowth and behavior on both vicinal and non-vicinal GaAs (111) substrates wereinvestigated by reflection high-energy electron diffraction, atomic forcemicroscopy, x-ray diffraction, and high resolution transmission electronmicroscopy. It is found that non-vicinal GaAs (111) substrate is better than avicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall andmagnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3topological insulator films can be directly grown on a GaAs (111) substrate,which may pave a way to fabricate topological insulator p-n junction on thesame substrate, compatible with the fabrication process of presentsemiconductor optoelectronic devices.

aip advances

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological  Insulators on GaAs (111) Substrates: A Potential Route to Fabricate  Topological Insulator p-n Junction