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Despite the prevalence of sputter deposition in the microelectronicsindustry, it has seen very limited applications for graphene electronics. Inthis letter, we report systematic investigation of the sputtering induceddamages in graphene and identify the energetic sputtering gas neutrals as theprimary cause of graphene disorder. We further demonstrate a grazing-incidencesputtering configuration that strongly suppresses fast neutral bombardment andretains graphene structure integrity, creating considerably lower damage thanelectron-beam evaporation. Such sputtering technique yields fully covered,smooth thin dielectric films, highlighting its potential for contact metals,gate oxides, and tunnel barriers fabrication in graphene device applications.

Low-Damage High-Throughput Grazing-Angle Sputter Deposition on Graphene