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Raman measurements are performed on defect-free wurzite GaP nanowires.Resonance Raman measurements are carried out over the excitation energy rangebetween 2.19 and 2.71 eV. Resonances at 2.38 eV and 2.67 eV of the E1(LO) modeand at 2.67 eV of the A1(LO) are observed. The presence of these intensityresonances clearly demonstrates the existence of energy states with Gamma_9hhand Gamma_7V (Gamma_7C) symmetries of the valence (conduction) band and allowsto measure WZ phase GaP band energies at the Gamma point. In addition, we haveinvestigated temperature dependent resonant Raman measurements, which allowedus to extrapolate the zero temperature values of Gamma point energies, alongwith the crystal field and spin-orbit splitting energies. Above results providea feedback for refining available theoretical calculations to derive thecorrect wurtzite III-V semiconductor band structure.

Electronic Band Structure of Wurtzite GaP Nanowires via Resonance Raman Spectroscopy