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Electrical current manipulation of magnetization switching throughspin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar deviceshas been investigated. The efficiency of the current-controlled magnetizationswitching is found to be sensitive to the orientation of the current withrespect to the crystalline axes. The dependence of the spin-orbit effectivemagnetic field on the direction and magnitude of the current is determined fromthe shifts in the magnetization switching angle. We find that the straininduced effective magnetic field is about three times as large as the Rashbainduced magnetic field in our GaMnAs devices.

Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As