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We investigate the effect of the laser parameters of pulsed laser depositionon the film stoichiometry and electronic properties of LaAlO_3/SrTiO_3 (001)heterostructures. The La/Al ratio in the LaAlO_3 films was varied over a widerange from 0.88 to 1.15, and was found to have a strong effect on the interfaceconductivity. In particular, the carrier density is modulated over more thantwo orders of magnitude. The film lattice expansion, caused by cationvacancies, is found to be the important functional parameter. These results canbe understood to arise from the variations in the electrostatic boundaryconditions, and their resolution, with stoichiometry.

Stoichiometry control of the electronic properties of the LaAlO_3/SrTiO_3 heterointerface