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We have investigated the spin current polarization without the externalmagnetic field in the resonant tunneling diode with the emitter and quantumwell layers made from the ferromagnetic GaMnN. For this purpose we have appliedthe self-consistent Wigner-Poisson method and studied the spin-polarizingeffect of the parallel and antiparallel alignment of the magnetization in theferromagnetic layers. The results of our calculations show that theantiparallel magnetization is much more advantageous for the spin filteroperation and leads to the full spin current polarization at low temperaturesand 35 % spin polarization of the current at room temperature.

Spin filter effect at room temperature in GaN/GaMnN ferromagnetic resonant tunneling diode