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Layered metal dichalcogenide materials are a family of semiconductors with awide range of energy band gaps and properties, and potential to open up newareas of physics and technology applications. However, obtaining high crystalquality thin films over a large area remains a challenge. Here we show thatchemical vapor deposition (CVD) can be used to achieve large area electronicgrade single crystal Molybdenum Disulfide (MoS2) thin films with the highestmobility reported in CVD grown films so far. Growth temperature and choice ofsubstrate were found to critically impact the quality of film grown, and hightemperature growth on (0001) orientated sapphire yielded highly oriented singlecrystal MoS2 films for the first time. Films grown under optimal conditionswere found to be of high structural quality from high-resolution X-raydiffraction, transmission electron microscopy, and Raman measurements,approaching the quality of reference geological MoS2. Photoluminescence andelectrical measurements confirmed the growth of optically active MoS2 with alow background carrier concentration, and high mobility. The CVD methodreported here for the growth of high quality MoS2 thin films paves the waytowards growth of a variety of layered 2D chalcogenide semiconductors and theirheterostructures.

Large Area Single Crystal (0001) Oriented MoS2 Thin Films