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We have investigated in-situ Si doping of InAs nanowires grown by molecularbeam epitaxy from gold seeds. The effectiveness of n-type doping is confirmedby electrical measurements showing an increase of the electron density with theSi flux. We also observe an increase of the electron density along thenanowires from the tip to the base, attributed to the dopant incorporation onthe nanowire facets whereas no detectable incorporation occurs through theseed. Furthermore the Si incorporation strongly influences the lateral growthof the nanowires without giving rise to significant tapering, revealing thecomplex interplay between axial and lateral growth.

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy