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We have investigated the deterioration of field effect transistors based ontwodimensional materials due to irradiation with swift heavy ions. Devices wereprepared with exfoliated single layers of MoS2 and graphene, respectively. Theywere characterized before and after irradiation with 1.14 GeV U228+2 ions usingthree different fluences. By electrical characterization, atomic forcemicroscopy and Raman spectroscopy we show that the irradiation leads tosignificant changes of structural and electrical properties. At the highestfluence of 4 x 102^11 ions/cm^2, the MoS2 transistor is destroyed, while thegraphene based device remains operational, albeit with an inferior performance.

Radiation Hardness of Graphene and MoS2 Field Effect Devices Against Swift Heavy Ion Irradiation