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Measurement of multiple quantum devices on a single chip increasescharacterization throughput and enables testing of device repeatability,process yield, and systematic variations in device design. We present a methodthat uses on-chip field-effect transistor switches to enable multiplexedcryogenic measurements of double quantum dot Si/SiGe devices. Multiplexingmakes it feasible to characterize a number of devices that scales exponentiallywith the number of external wires, a key capability given the significantconstraints on cryostat wiring currently in common use. We use this approach tocharacterize three nominally identical quantum-point contact channels, enablingcomparison of their threshold voltages for accumulation and their pinch-offvoltages during a single cool-down of a dilution refrigerator.

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing