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Self assembled AlGaN polarization-induced nanowire light emitting diodes(PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assistedmolecular beam epitaxy on Si substrates. Atomically sharp electroluminescence(EL) from Gd intra-f-shell electronic transitions at 313 nm and 318 nm areobserved under forward biases above 5V. The intensity of the Gd 4f EL scaleslinearly with current density and increases at lower temperature. The lowelectric field excitation of Gd 4f EL in PINLEDs is contrasted with high fieldexcitation in Gd:AlGaN MIS nanowire devices (metal/Gd:AlN/polarization inducedn-AlGaN) where it is concluded that PINLED devices offer over a three foldenhancement in 4f EL intensity at a given device bias.

Atomically Sharp 318nm Gd:AlGaN Ultraviolet Light Emitting Diodes on Si with Low Threshold Voltage