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The effect of deposition oxygen pressure (P$_{O}$) on phase separation (PS)induced in epitaxial La$_{0.67}$Ca$_{0.33}$MnO$_{3}$/NdGaO$_{3}$(001) films wasinvestigated. Fully oxygenated films grown at high P$_{O}$ are anisotropicallystrained. They exhibit PS over a wide temperature range, because of the largeorthorhombicity of NdGaO$_{3}$ substrates. The paramagneticinsulator-to-ferromagnetic metal (FM) and FM-to-antiferromagnetic insulator(AFI) transitions gradually shift to lower temperatures with decreasing PO. TheAFI state is initially weakened (P$_{O}$ >= 30 Pa), but then becomes morerobust against the magnetic field (P$_{O}$ < 30 Pa). The out-of-plane filmlattice parameter increases with decreasing P$_{O}$. For films grown atP$_{O}$>= 30 Pa, the slight oxygen deficiency may enlarge the lattice unitcell, reduce the anisotropic strain and suppress the AFI state. Films depositedat P$_{O}$ < 30 Pa instead experience an average compressive strain. Theenhanced compressive strain and structural defects in the films may lead to therobust AFI state. These results aid our understanding of PS in manganite films.

Effect of growth oxygen pressure on anisotropic-strain-induced phase separation in epitaxial La$_{0.67}$Ca$_{0.33}$MnO$_{3}$/NdGaO$_{3}$(001) films