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SrRuO3 (SRO), a conducting transition metal oxide, is commonly used forengineering domains in BiFeO3. New oxide devices can be envisioned byintegrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Usinga three-terminal device configuration, we study vertical transport in aSRO/Nb:STO device at the nanoscale and find local differences in transport,that originate due to the high selectivity of SRO growth on the underlyingsurface terminations in Nb:STO. This causes a change in the interface energyband characteristics and is explained by the differences in the spatialdistribution of the interface-dipoles at the local Schottky interface.

Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3