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We discuss the residual carrier density (n*) near the Dirac point (DP) ingraphene estimated by quantum capacitance (CQ) and conductivity measurements.The CQ at the DP has a finite value and is independent of the temperature. Asimilar behavior is also observed for the conductivity at the DP, because theirorigin is residual carriers induced externally by charged impurities. The n*extracted from CQ, however, is often smaller than that from the conductivity,suggesting that the mobility in the puddle region is lower than that in thelinear region. The CQ measurement should be employed for estimating n*quantitatively.

Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement