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The correlated electron system SmNiO3 exhibits a metal-insulator phasetransition at 130 {\deg}C. Using an ionic liquid as an electric double layer(EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gatecontrol of the channel resistance and transition temperature. Resistancereduction is observed across both insulating and metallic phases with ~25%modulation at room temperature. We show that resistance modulation ispredominantly due to electrostatic charge accumulation and not electrochemicaldoping by control experiments in inert and air en-vironments. We model theresistance behavior and estimate the accumulated sheet density (~1-2 x 10^14cm^-2) and EDL capacitance (~12 {\mu}F/cm^2).

Electrostatic gating of metallic and insulating phases in SmNiO3 ultrathin films