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Thin films of the proposed topological insulator PdLuBi - a Heusler compoundwith the C1b structure - were prepared on Ta-Mo-buffered MgO(100) substrates byco-sputtering from PdBi2 and Lu targets. Epitaxial growth of high-qualityPdLuBi films was confirmed by X-ray spectrometry and reflection high-energyelectron diffraction. The root-mean-square roughness of the films was as low as1.45 nm, although the films were deposited at high temperature. The filmcomposition is close to the ideal stoichiometric ratio. The valence bandspectra of the PdLuBi films, observed by hard X-ray photoelectron spectroscopy,correspond perfectly to the ab-initio-calculated density of states.

Electronic and crystalline structures of zero band-gap PdLuBi thin films grown epitaxially on MgO(100)