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We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normalmetal-insulator-superconductor (NIS) tunnel junction devices, using pulsedlaser deposition (PLD) for NbN film growth, and electron-beam lithography andshadow evaporation for the final device fabrication. The subgap conductance ofthese devices exhibit a strong temperature dependence, rendering them suitablefor thermometry from $\sim$ 0.1 K all the way up to the superconductingtransition temperature of the NbN layer, which was here $\sim 11$ K, but couldbe extended up to $\sim 16$ K in our PLD chamber. Our data fits well to thesingle particle NIS tunnel junction theory, with an observed proximisedsuperconducting gap value $\sim $ 1 meV for a 40 nm thick Al overlayer.Although this high value of the superconducting energy gap is promising forpotential electronic NIS cooling applications as well, the high value of thetunneling resistance inhibits electronic cooling in the present devices. Suchopaque barriers are, however, ideal for thermometry purposes as self-inducedthermal effects are thus minimized.

Niobium nitride-based normal metal-insulator-superconductor tunnel junction microthermometer