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MnxGa films with high perpendicular anisotropy, coercivity and energy producthave great application potential in ultrahigh-density perpendicular recording,permanent magnets, spin-transfer-torque memory and oscillators,magneto-resistance sensors and ferromagnetic metal/semiconductorheterostructure devices. Here we present a comprehensive diagram of effectivemagnetism-tailoring of perpendicularly magnetized MnxGa films grown on III-Vsemiconductor GaAs by using molecular-beam epitaxy for the first time, bysystematically investigating the wide-range composition and detailedpost-growth annealing effects. We show that the (001)-orientated MnxGa filmswith L10 or D022 ordering could be crystallized on GaAs in a very widecomposition range from x=0.76 to 2.6. L10-ordered MnxGa films show robustmagnetization, high remanent ratio, giant perpendicular anisotropy, highintrinsic and extrinsic coercivity, and large energy product, which make thiskind of material favorable for perpendicular magnetic recording,high-performance spintronic devices and permanent magnet applications. Incontrast, D022-ordered films exhibit lower perpendicular anisotropy and weakermagnetism. Post-growth annealing MnxGa films studies reveal highthermal-stability up to 450 oC, and effective tailoring of magnetic propertiescan be realized by prolonging annealing at 450 oC. These results would behelpful for understanding this kind of material and designing new spintronicdevices for specific practical applications.

Tailoring Magnetism of Perpendicularly Magnetized MnxGa Epitaxial Films on GaAs for Practical Applications