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High brightness light emissions from single InAs/GaAs quantum dots (QDs) epitaxially grown directly on silicon substrates are realized for the first time. The grown structures contain a low quantum dot density of about 108 cm−2. Low-temperature spatially resolved photoluminescence (PL) measurements illustrate bright single QD emissions with relatively sharp excitonic lines comparable to PL spectra of near-surface QDs grown on GaAs substrates.

Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates