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Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on(001)-oriented LSAT substrates using the pulsed electron-beam depositiontechnique. The transport study revealed a temperature driven metal-insulatortransition (MIT) at 95 K for the film with x = 0.67. The films with highervanadium concentration (x > 0.67) were metallic, and the electrical resistivityfollowed the T^2 law corresponding to a Fermi liquid system. In the insulatingregion of x < 0.67, the temperature dependence of electrical resistivity forthe x = 0.5 and 0.33 films can be scaled with the variable range hopping model.The possible mechanisms behind the observed MIT were discussed, including theeffects of electron correlation, lattice distortion and Anderson localization.

Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films