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Starting with empirical tight-binding band structures, the branch-point (BP)energies and resulting valence band offsets (VBOs) for the zincblende phase ofInN, GaN and AlN are calculated from their k-averaged midgap energy.Furthermore, the directional dependence of the BPs of GaN and AlN is discussedusing the Green's function method of Tersoff. We then show how to obtain theBPs for binary semiconductor alloys within a band-diagonal representation ofthe coherent potential approximation (CPA) and apply this method to cubic AlGaNalloys. The resulting band offsets show good agreement to availableexperimental and theoretical data from the literature. Our results can be usedto determine the band alignment in isovalent heterostructures involving purecubic III-nitrides or AlGaN alloys for arbitrary concentrations.

Tight-binding branch-point energies and band offsets for cubic InN, GaN, AlN and AlGaN alloys