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Thanks to its high refractive index contrast, band gap and polarizationmismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are anattractive solution for applications such as distributed Bragg reflectors,ultraviolet light-emitting diodes, or high electron mobility transistors. Inorder to study the structural degradation mechanism of InAlN layers withincreasing thickness, we performed metalorganic vapor phase epitaxy of InAlNlayers of thicknesses ranging from 2 to 500 nm, on free-standing (0001) GaNsubstrates with a low density of threading dislocations, for In compositions of13.5% (layers under tensile strain), and 19.7% (layers under compressivestrain). In both cases, a surface morphology with hillocks is initiallyobserved, followed by the appearance of V-defects. We propose that thosehillocks arise due to kinetic roughening, and that V-defects subsequentlyappear beyond a critical hillock size. It is seen that the critical thicknessfor the appearance of V-defects increases together with the surface diffusionlength either by increasing the temperature or the In flux because of asurfactant effect. In thick InAlN layers, a better (worse) In incorporationoccurring on the concave (convex) shape surfaces of the V-defects is observedleading to a top phase-separated InAlN layer lying on the initial homogeneousInAlN layer after V-defects coalescence. It is suggested that similarmechanisms could be responsible for the degradation of thick InGaN layers.

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates