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Epitaxial layers of the topological insulator Bi2Se3 have been grown bymolecular beam epitaxy on laterally lattice-matched InP(111)B substrates. Highresolution X-ray diffraction shows a significant improvement of Bi2Se3 crystalquality compared to layers deposited on other substrates. The measured fullwidth at half maximum of the rocking curve is Delta omega=13 arcsec, and the(omega-2theta) scans exhibit clear layer thickness fringes. Atomic forcemicroscope images show triangular twin domains with sizes increasing with layerthickness. The structural quality of the domains is confirmed on themicroscopic level by transmission electron microscopy.

Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates