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Electron-hole pair creation energy (e) has been determined from alpha spectroscopy using 4H-SiC epitaxial layer Schottky detectors and a pulser calibration technique. We report an experimentally obtained e value of 7.28 eV in 4H-SiC. The obtained e value and theoretical models were used to calculate a Fano factor of 0.128 for 5.48 MeV alpha particles. The contributions of different factors to the ultimate alpha peak broadening in pulse-height spectra were determined using the calculated e value and Monte-Carlo simulations. The determined e value was verified using a drift-diffusion model of variation of charge collection efficiency with applied bias.

Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach